We study the electronic transport properties of metallic thin films and nanostructures. Currently we are focussing on the anomalous or topological Hall effect in ferro- and antiferromagnetic films and single crystals, on the superconductive proximity-effect between two- and threedimensional systems, on the conductance through rare-earth atomic contacts, and on the spininjection and -manipulation in CMOS-compatible heterostructures.
- Spininjection and spinmanipulation in CMOS-compatible heterostructures
This is a cooperative project between the Physikalische Institut (PHI) and the Institute of Semiconductortechnology (IHT) at the University of Stuttgart. The goal is the demonstration of spininjection, -detection and –manipulation in CMOS-compatible devices. Carbon-doped Mn5Si3 und Mn5Ge3 compounds with Curie temperatures of 350 K and 450 K, respectively, will be used as ferromagnetic electrodes for spininjection into Ge- and Si-based semiconductor heterostructures. Samples will be prepared by epitaxial growth in ultra-high vacuum and characterized by electronic transport measurements (Hanle-Effekt), optical measurements, and measurements of the Spin-Seebeck effect. The project is supported by the DFG.
- Preparation of thin films and multilayers by electron-beam evaporation in UHV and by magnetron sputtering
- Mechanically controlled break-junctions
- In-situ characterization by electron diffraction and Auger electron spectroscopy
- x-ray diffraction
- Scanning tunneling microscopy and spectroscopy between 5 and 300 K
- Electronic transport measurements (resistivity, Hall effect, electric-field effect) at low temperatures and in magnetic fields