We study the electronic transport properties of metallic thin films and nanostructures. Currently we are focussing on the anomalous Hall effect in antiferromagnetic films and single crystals, on the conductance through rare-earth atomic contacts, and on the spininjection and -manipulation in CMOS-compatible heterostructures.
- Spininjection and spinmanipulation in CMOS-compatible heterostructures
This is a cooperative project between the Physikalische Institut (PHI) and the Institute of Semiconductortechnology (IHT) at the University of Stuttgart. The goal is the demonstration of spininjection, -detection and –manipulation in CMOS-compatible devices. Carbon-doped Mn5Si3 und Mn5Ge3 compounds with Curie temperatures of 350 K and 450 K, respectively, will be used as ferromagnetic electrodes for spininjection into Ge- and Si-based semiconductor heterostructures. Samples will be prepared by epitaxial growth in ultra-high vacuum and characterized by electronic transport measurements (Hanle-Effekt), optical measurements, and measurements of the Spin-Seebeck effect. The project is supported by the DFG.
- Preparation of thin films and multilayers by electron-beam evaporation in UHV and by magnetron sputtering
- Mechanically controlled break-junctions
- In-situ surface characterization
- x-ray diffraction
- Scanning tunneling microscopy and spectroscopy
- Electronic transport measurements (resistivity, Hall effect, electric-field effect) at low temperatures and in magnetic fields